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Electron microscope Product List and Ranking from 37 Manufacturers, Suppliers and Companies | IPROS GMS

Last Updated： Aggregation Period:Feb 04, 2026～Mar 03, 2026
This ranking is based on the number of page views on our site.

Electron microscope Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Feb 04, 2026～Mar 03, 2026
This ranking is based on the number of page views on our site.

  1. アズサイエンス 松本本社 Nagano//Trading company/Wholesale
  2. 一般財団法人材料科学技術振興財団　MST Tokyo//Testing, Analysis and Measurement
  3. ロンビック Mie//Resin/Plastic
  4. 4 アイテス Shiga//Electronic Components and Semiconductors
  5. 5 関西電力送配電 技術試験センター Hyogo//Electricity, Gas and Water Industry
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Electron microscope Product ranking

Last Updated： Aggregation Period:Feb 04, 2026～Mar 03, 2026
This ranking is based on the number of page views on our site.

  1. In various fields such as the semiconductor industry, polymer material development and research, and quality control! アズサイエンス 松本本社
  2. [Introduction of Testing Equipment] Multi-Angle Lens VHX-D510 関西電力送配電 技術試験センター
  3. Observation of Cellulose Nanofibers (CNF) - Examples of SEM and TEM Observations ロンビック
  4. 4 JEM-1400Flash Electron Microscope アズサイエンス 松本本社
  5. 5 JEM-ARM200F NEOARM Atomic Resolution Analytical Electron Microscope アズサイエンス 松本本社

Electron microscope Product List

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Tabletop Scanning Electron Microscope 'Phenom Pharos'

Tabletop Scanning Electron Microscope 'Phenom Pharos'

Even more beautiful with the FE electron gun! Achieving high resolution close to floor models with a tabletop SEM.

We would like to introduce the tabletop scanning electron microscope 'Phenom Pharos' that we handle. It enables analysis at the nano to sub-micron level. Anyone can easily and quickly perform high-resolution observations. Additionally, it is also possible to measure 3D structures, particles, and pores. Please feel free to contact us if you have any requests. 【Features】 ■ Equipped with FE electron gun ■ Easy and speedy high-resolution observation for anyone ■ Observation + α (3D, particles, pores, fibers) *For more details, please refer to the PDF document or feel free to contact us.

  • Other microscopes
  • Electron microscope

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Dislocation observation using the SEM-ECCI method

Dislocation observation using the SEM-ECCI method

The observation of dislocations in metallic materials has traditionally been done using TEM, but it has now become possible to observe dislocations using SEM.

An essential understanding of the processes of deformation and fracture in metallic materials requires the visualization of dislocation states. Traditionally, transmission electron microscopy (TEM) has been used to observe dislocations in metallic materials, but in recent years, observations using scanning electron microscopy (SEM) have also been attempted. This time, our company has also become capable of observing dislocations using SEM.

  • Contract Analysis
  • Electron microscope

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Observation of dislocations in GaN using the SEM-ECCI method.

Observation of dislocations in GaN using the SEM-ECCI method.

Using the SEM-ECCI method, observation becomes possible with easy preprocessing! We will also introduce measurement examples of single crystal GaN.

Our company conducts dislocation observation of GaN using the SEM-ECCI method. In power semiconductors such as Gallium Nitride (GaN), dislocations present during manufacturing are considered factors that lead to decreased device performance and shortened lifespan. Dislocation observation in semiconductors is mainly performed using Transmission Electron Microscopy (TEM) or the Etch Pit method; however, using the SEM-ECCI method allows for observation with easy pre-treatment. [Measurement Example] - Sample: Single crystal GaN (wafer with GaN deposited on a sapphire substrate) - Surface Orientation: C-plane (0001) ±0.5° - GaN Film Thickness: 4.5 ± 0.5 μm - Measurement Conditions: Backscattering mode *For more details, please refer to the related links or feel free to contact us.

  • Contract measurement
  • Electron microscope

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Observation of GaN defects using forward scattering electrons in SEM.

Observation of GaN defects using forward scattering electrons in SEM.

Dislocations and steps (tiny steps) as well as small orientation differences in power semiconductors such as GaN can be observed.

In power semiconductors such as GaN, atomic-level defects affect performance degradation. By evaluating forward-scattered electrons using an EBSD detector, it becomes possible to observe dislocations as well as steps (small height differences) and micro-orientation differences.

  • Contract Analysis
  • Electron microscope

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"Damage analysis" Proven track record of analyzing approximately 3,000 equipment troubles!

"Damage analysis" Proven track record of analyzing approximately 3,000 equipment troubles!

By investigating the true cause of the troubles that occurred with the equipment, it becomes possible to formulate effective countermeasures!

By analyzing the damaged areas caused by equipment troubles in detail, we can investigate the true causes of the issues that occurred and propose measures to help prevent recurrence and improve the situation. Utilizing over 40 years of experience and expertise within the Toray Group, we answer our customers' questions using various tools such as electron microscopes and component analysis devices. 【Examples of Analysis Equipment】 ■ Scanning Electron Microscope (SEM) ■ Energy Dispersive X-ray Spectroscopy (EDS) ■ Hardness Tester ■ Various Optical Microscopes, etc.

  • others
  • Electron microscope

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For the pharmaceutical industry! 'Virus safety testing' using electron microscopy.

For the pharmaceutical industry! 'Virus safety testing' using electron microscopy.

Safety testing using transmission electron microscopy! We have years of accumulated experience and achievements!

At the Flower Market Electron Microscopy Technology Research Institute, we offer contract services for "Virus Safety Testing" using electron microscopy. Under strict management in compliance with GLP/GMP, we conduct virus safety tests. For example, when producing biopharmaceuticals using CHO cells, it is necessary to perform electron microscopy observations in the retrovirus negative test based on the test items outlined in ICH Q5A and Q5D. Based on our years of accumulated experience and achievements, we provide our customers with highly reliable data. 【Features】 ■ Safety testing using transmission electron microscopy ■ Years of accumulated experience and achievements ■ Providing customers with highly reliable data *For more details, please refer to the PDF materials or feel free to contact us.

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  • Electron microscope

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[Case Analysis] Pathogenic Escherichia coli O-157

[Case Analysis] Pathogenic Escherichia coli O-157

Analyzing a bacterium known as one of the causes of collective food poisoning using ×30,000 magnification with 1: TEM and 2: SEM!

We would like to introduce a case study of the analysis of "pathogenic Escherichia coli O-157" conducted by our company. "O-157" has recently become known as one of the bacteria responsible for foodborne outbreaks, and elucidating the mechanism of its verotoxin production is an urgent task. Bacteria have a cell wall surrounding them, making it difficult for chemicals such as fixatives to penetrate. The sample preparation method is fundamentally similar to that of animal tissues, but the image quality can be improved by extending the processing time and performing fixation at room temperature. 【Analysis Overview】 ■ Target of Analysis: Pathogenic Escherichia coli O-157 ■ Sample Preparation Method: Essentially similar to animal tissues - Image quality is improved by extending processing time and performing fixation at room temperature. *For more details, please refer to the PDF document or feel free to contact us.

  • Contract Analysis
  • Electron microscope

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Tabletop Low Voltage Transmission Electron Microscope (TEM) LVEM 5

Tabletop Low Voltage Transmission Electron Microscope (TEM) LVEM 5

The LVEM 5 is an unprecedented "tabletop type" "low-cost" "transmission electron microscope (TEM)." SEM/STEM can be added as an option.

**Main Features of LVEM5** ◆ Versatility with the ability to switch between TEM (including electron diffraction), SEM, and STEM imaging modes in a single unit. It allows observation of the same area of the sample simply by switching modes (when each imaging mode is equipped). ◆ Outstanding space-saving design; being a tabletop type, it does not require special facilities. ◆ Low voltage (5KV) reduces damage to samples during biological material observation and allows for observation without staining, making it effective for observing light elements and light metals. ◆ Easy operation makes it accessible to anyone, eliminating the need for dedicated operators. ◆ The uniquely designed permanent magnet lens does not require cooling. ◆ The use of an ion getter pump achieves a clean, vibration-free environment and high vacuum. ◆ Easily switchable imaging modes Multiple imaging modes can be executed by switching, allowing for the capture of both surface images and transmission images. Additionally, modes can be switched with one click without needing to readjust the column or the sample.

  • Electron microscope
  • Electron microscope

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Observation of micro-nano domain morphology using High-Resolution Transmission Electron Microscopy (HR-TEM)

Observation of micro-nano domain morphology using High-Resolution Transmission Electron Microscopy (HR-TEM)

We provide contract analysis services equipped with devices for physical analysis, and we also offer on-site analysis.

The main equipment includes "HR-TEM," "Q-pole type SIMS," "μESCA," and "RAMAN." We have accumulated know-how in micro and nano-level surface analysis, allowing us to provide reliable data in a short period. We also offer advice on the analysis of unknown samples. 【Observation of Micro Areas - High-Resolution Transmission Electron Microscopy (HR-TEM)】 ○ A method that irradiates a thinly processed sample with a high-speed electron beam, providing magnified images and information on crystal structures through the imaging of transmitted and scattered electrons. ○ It is suitable for evaluating the structure and crystallinity of thin films. High-resolution observation enables the examination of crystal structures. ● For more details, please download the catalog or contact us.

  • Food Testing/Analysis/Measuring Equipment
  • Electron microscope

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Analysis of electronic components and materials using TEM.

Analysis of electronic components and materials using TEM.

TEM (Transmission Electron Microscope) meets a wide range of requirements for observing failure sites of electronic components, length measurements, elemental analysis, crystal structure analysis, and material evaluation.

TEM can perform not only high-magnification observation but also elemental analysis using EDS and EELS, as well as analysis of crystal structure, surface orientation, lattice constants, and more through electron diffraction.

  • Contract Analysis
  • Other semiconductors
  • Other contract services
  • Electron microscope

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Crystal analysis by EBSD BGA

Crystal analysis by EBSD BGA

The EBSD method allows for the estimation of crystal states and residual stresses! Here is an example of BGA analysis.

Here is an example of the analysis of BGA (Ball Grid Array). In the observation using a microscope, both optical microscopy and SEM are employed. In the crystal analysis using the EBSD method, we utilize the Phase map, Sn Grain map, Sn IPF map, and Sn GROD map, which allow for the inference of crystal states and residual stresses. 【Overview】 ■ Crystal analysis using the EBSD method - Phase map - Sn Grain map - Sn IPF map - Sn GROD map *For more details, please refer to the PDF materials or feel free to contact us.

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  • Analytical Equipment and Devices
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Observation of the diffusion layer of SiC MOSFET using LV-SEM and EBIC methods.

Observation of the diffusion layer of SiC MOSFET using LV-SEM and EBIC methods.

Even with SiC power devices, we can provide consistent support for cross-section preparation of specific areas, observation of diffusion layer shapes, as well as wiring structure and crystal structure analysis!

Our company conducts observations of the diffusion layer of SiC MOSFETs using LV-SEM and EBIC methods. We can perform cross-section fabrication of specific areas using FIB, shape observation of the diffusion layer using LV-SEM/EBIC, and further through analyses of wiring structures and crystal structures using TEM, all applicable to SiC power devices. In "LV-SEM diffusion layer observation," secondary electrons (SE2) influenced by the built-in potential of the PN junction are detected with the Inlens detector. The shape of the diffusion layer can be visualized through SEM observation of the FIB cross-section. [Analysis methods using EBIC] ■ PEM/OBIRCH defect location identification ■ FIB cross-section processing ■ Low acceleration SEM ■ EBIC analysis ■ TEM *For more details, please refer to the PDF document or feel free to contact us.

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  • Analysis Services
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  • Electron microscope

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Crack observation using a tabletop SEM (scanning electron microscope).

Crack observation using a tabletop SEM (scanning electron microscope).

Fine cracks are easy to see! No conductive treatment is required, allowing for quick and detailed observation.

Introducing "Crack Observation Using Tabletop SEM (Scanning Electron Microscope)." In the evaluation of product reliability, cross-sectional observation of cracks is essential. While optical microscopy may overlook small cracks, SEM observation allows for clear identification. Moreover, with a tabletop SEM, no conductive treatment is necessary, enabling quick and detailed observation. 【Features】 ■ No need for deposition ■ Easy visibility of crystal grains ■ Fine cracks are easily visible *For more details, please refer to the PDF document or feel free to contact us.

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  • Electron microscope
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[Data] Cross-sectional observation of neodymium magnets using a tabletop SEM (scanning electron microscope)

[Data] Cross-sectional observation of neodymium magnets using a tabletop SEM (scanning electron microscope)

We have published cross-sectional observations in clear vision mode and normal/standard mode!

This document introduces the cross-sectional observation of neodymium magnets using a tabletop SEM (scanning electron microscope). Samples with magnetic properties, such as neodymium magnets, cannot be observed in a magnetized state using SEM; however, by applying demagnetization treatment, SEM observation and elemental analysis can be performed. Please take a moment to read it. 【Contents】 ■ Demagnetization of neodymium magnets and cross-sectional observation using SEM (Hitachi High-Tech TM3030Plus) - Demagnetization treatment (SEM observation of the magnet in a magnetized state is not possible, so demagnetization is performed) - Cross-sectional observation - Elemental analysis using EDX *For more details, please refer to the PDF document or feel free to contact us.

  • Electron microscope
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Differences in appearance due to SEM observation conditions

Differences in appearance due to SEM observation conditions

Introducing SEM images taken under various conditions! An explanation of the differences in appearance based on SEM observation conditions.

SEM observation involves detecting secondary electrons and backscattered electrons generated when electrons irradiate the surface of the sample and scatter in the outermost layer of the sample. These are captured by a detector and displayed as an image on a monitor. There are various types of detectors for capturing electrons, each producing images that leverage their unique characteristics, and the appearance can change by varying the acceleration voltage. In this document, we introduce SEM images captured under various conditions. We encourage you to read it. [Contents] ■ Backscattered Electron Images - Backscattered electron images at high acceleration voltage (AsB detector) - Backscattered electron images at low acceleration voltage (EsB detector) ■ Secondary Electron Images - Differences in appearance based on acceleration voltage - Differences in appearance based on detector position *For more details, please refer to the PDF document or feel free to contact us.

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  • Other contract services
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FE-SEM observation (Crystal grain observation of Al wire bonding section)

FE-SEM observation (Crystal grain observation of Al wire bonding section)

High-brightness electron gun for detailed SEM images! Equipped with an in-lens SE detector sensitive to surface information.

The ZEISS "FE-SEM ULTRA55" is equipped with a GEMINI column, allowing for high-resolution observation at extremely low acceleration voltages. It also features multiple detectors, enabling the observation of various samples. Composition information can be obtained using two types of backscattered electron detectors, and high-resolution EDX analysis can be performed even at low acceleration voltages. 【Features】 ■ High-brightness electron gun for detailed SEM images ■ Ultra-surface analysis at extremely low acceleration voltages ■ In-lens SE detector sensitive to surface information ■ Composition information obtained from two types of backscattered electron detectors ■ High-resolution EDX analysis even at low acceleration voltages ■ Observation without deposition *For more details, please refer to the PDF document or feel free to contact us.

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  • Analytical Equipment and Devices
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  • Electron microscope

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Observation of the coating film

Observation of the coating film

Introducing examples of observation and analysis of coating films used in various products, including "microtomes" capable of planar inclined cutting!

We will introduce examples of observation and analysis of coating films used in various products such as automobiles and mobile phones. The "Triple Ion Polisher (CP)" can process samples containing both hard and soft materials without causing damage, while the "Microtome" is capable of not only producing cross-sections but also performing planar inclined cutting. Additionally, the "Desktop Inclined Cutting Machine" can extract sample surfaces that are 6 to 300 times the original thickness as surface information, and the "Desktop SEM (Scanning Electron Microscope)" has a mode for observation under low vacuum (charge reduction), allowing for the observation and elemental analysis of samples that release volatile components. [Observation of Plastic Coating (Mobile Phone Case)] ■ Triple Ion Polisher (CP) ■ Microtome ■ Desktop Inclined Cutting Machine ■ Desktop SEM (Scanning Electron Microscope) *For more details, please refer to the PDF document or feel free to contact us.

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  • Analytical Equipment and Devices
  • Other environmental analysis equipment
  • Electron microscope

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Announcement of the introduction of Talos F200E

Announcement of the introduction of Talos F200E

Improved resolution for TEM and STEM! Performance has been significantly enhanced, allowing for EDS analysis with four detectors.

Our company will introduce the FEI "Talos F200E" transmission electron microscope system. Compared to conventional models, the resolution of TEM and STEM has improved, and performance has been significantly enhanced, including the capability for EDS analysis with four detectors. Additionally, it is equipped with Drift Corrected Frame Integration (DCFI), which allows for the integration of multiple frames while correcting for drift. 【Specifications (excerpt)】 ■ Acceleration Voltage: 200kV, 80kV ■ TEM Information Limit: ≦0.11nm ■ STEM Resolution: ≦0.14nm ■ Drift Corrected Frame Integration (DCFI) ・Integration of multiple frames while correcting for drift *For more details, please download the PDF or feel free to contact us.

  • Other microscopes
  • Transmission electron microscope
  • Electron microscope

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(S)TEM (Scanning Transmission Electron Microscopy)

(S)TEM (Scanning Transmission Electron Microscopy)

Elemental analysis, state evaluation, particle size analysis, and acquisition of three-dimensional structural images at the nanoscale.

TEM (Transmission Electron Microscopy) is a method that involves irradiating a thin sample with an electron beam, imaging the electrons that have passed through or scattered from the sample, and observing it at high magnification. ■ Advantages - Enlarged images can be obtained with sub-nanometer spatial resolution, allowing for the observation and analysis of the sample's fine structure and lattice defects. - It is possible to evaluate the crystallinity of the sample and identify materials. - By fabricating samples using FIB (Focused Ion Beam), it is possible to observe specific locations within a device with pinpoint accuracy. - By combining optional features, it is also possible to analyze the composition and state of localized areas. ■ Disadvantages - It is necessary to thin the sample (in some cases, thinning may be difficult for certain samples). - It does not observe individual atoms but rather displays average information in the thickness direction of the sample (typically about 0.1 μm thick). - Sample processing and observation may lead to alteration or deformation of the sample.

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[Analysis Case] Evaluation of Specific Crystalline Grains in CIGS Thin-Film Solar Cells

[Analysis Case] Evaluation of Specific Crystalline Grains in CIGS Thin-Film Solar Cells

Observation of orthogonal cross-sections at locations with characteristics identified in EBIC measurements of arbitrary cross-sections.

Insights into the relationship between electrical properties and crystals can be obtained through EBIC and EBSD, but the depth of information differs. For areas where electrical properties were characteristic in the EBIC distribution measurement, we created cross-sectional samples and conducted STEM imaging in the depth direction. Additionally, we measured electron diffraction for each crystal grain. This further clarified the relationship between electrical properties and crystal grains and grain boundaries. By performing STEM observation and electron diffraction measurements, it is possible to obtain localized information about specific crystal grains.

  • Contract Analysis
  • Electron microscope

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[Analysis Case] Evaluation of the Mixed State of the Active Layer in Organic Thin-Film Solar Cells

[Analysis Case] Evaluation of the Mixed State of the Active Layer in Organic Thin-Film Solar Cells

Evaluation of the distribution state of organic materials using low-energy STEM observation and EELS measurement.

By using low-energy STEM observation and STEM-EELS surface analysis, we evaluated the mixed state of the active layer in bulk heterojunction solar cells. For the evaluation, samples were prepared with only the active layer deposited on ITO. The contrast in the low-energy STEM image (Photo 1) corresponds to the elemental distribution of S and C in the STEM-EELS images (Photos 2 and 3), confirming that it reflects the bulk heterostructure. Additionally, a bias in the distribution of S was observed, suggesting that P3HT is segregated towards the surface side.

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  • Electron microscope

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[Analysis Case] Observation of Heterojunction Interface in CIGS Thin-Film Solar Cells

[Analysis Case] Observation of Heterojunction Interface in CIGS Thin-Film Solar Cells

Evaluation of the crystal structure of the high-resistance layer at the CdS/CIGS junction interface using ultra-high-resolution STEM.

We directly observed the CdS/CIGS heterojunction interface using a Cs-corrected STEM device. TEM images, high-resolution HAADF-STEM images, and simulations using first-principles calculations confirmed that CIGS and CdS are heteroepitaxially joined.

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  • Electron microscope

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[Analysis Case] Cross-Section Observation of Organic Thin-Film Solar Cells

[Analysis Case] Cross-Section Observation of Organic Thin-Film Solar Cells

Using low acceleration voltage STEM, slight density differences in organic films can be observed.

In bulk heterojunction solar cells using mixed films of p-type and n-type materials, it is necessary to appropriately control the mixing state of the materials within the film for high efficiency. In films with low density (such as organic films), it is difficult to achieve contrast using a dedicated TEM machine at high acceleration voltages (several hundred kV) due to the high transmission of the electron beam. On the other hand, in STEM imaging at low acceleration voltages, where slight differences in density are reflected, the mixing state within the film can be clearly observed.

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[Analysis Case] Observation of Crystal Structure of Multicomponent Metallic Nanoparticles by TEM

[Analysis Case] Observation of Crystal Structure of Multicomponent Metallic Nanoparticles by TEM

Ultra-high resolution STEM observation of InGaZnO4 particles

The STEM device equipped with a Cs collector (spherical aberration correction function) enables ultra-high-resolution observation (resolution of 0.10 nm). The HAADF*-STEM image, which is sensitive to atomic weight, is an effective tool for directly understanding multi-component crystal structures. In this study, we evaluated micro-particles in oxide semiconductors, which can be applied to the atomic arrangement at heterogeneous material interfaces and compound interfaces, as well as grain boundary segregation assessments. *High-Angle Annular Dark-Field: Contrast is obtained that is proportional to atomic weight (Z).

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[Analysis Case] Cross-sectional Observation of TEM/SEM Organic EL and Gate Oxide Film

[Analysis Case] Cross-sectional Observation of TEM/SEM Organic EL and Gate Oxide Film

Low-acceleration STEM observation allows for contrast even in low-density membranes.

For membranes with low density, it is difficult to achieve contrast at high acceleration voltages (hundreds of kV) due to the high transmission capability of the electron beam. However, in low acceleration voltage SEM-STEM images, slight differences in density can be reflected, allowing for clear composition contrast. This can be applied to organic EL films, low-k films, gate oxide films, TEOS films, BPSG films, etc., where the differences in density, average mass, and composition are small. 1) STEM observation using SEM equipment with lower acceleration voltage compared to dedicated TEM equipment. Measurement methods: TEM, SEM Product fields: LSI, memory, display, solar cells, lighting Analysis purposes: Shape evaluation, film thickness evaluation For more details, please download the materials or contact us.

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[Slice&View] Three-Dimensional SEM Observation Method

[Slice&View] Three-Dimensional SEM Observation Method

By repeatedly performing cross-sectioning processing with FIB and observation with SEM, and reconstructing the obtained images, three-dimensional structural information can be obtained.

Using a high-resolution SEM device equipped with FIB, we can obtain three-dimensional structural information by repeatedly performing cross-sectioning (Slice) with FIB and observing (View) with SEM, and then reconstructing the acquired images. Similarly, Slice & View is also possible for SIM (Scanning Ion Microscope) images. - It is possible to observe secondary electron (SE), backscattered electron (BSE) images, and scanning ion microscope (SIM) images.

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[Analysis Case] Observation of the Cross-Section of Tooth Enamel Prisms

[Analysis Case] Observation of the Cross-Section of Tooth Enamel Prisms

Applying FIB processing technology, the entire interface of enamel/dental adhesive is observed.

In dental caries treatment, adhesives are used to integrate the filling material used to fill the "cavity" with the tooth structure. The adhesive must have a strong bonding strength with the tooth and the ability to withstand acids and heat that may occur in the oral cavity over a long period after treatment. Observing the adhesive interface is an effective means for evaluation and consideration. By using a manufacturing method that employs FIB processing technology, we were able to achieve effective results that could not be obtained with conventional ultra-thin sections made with diamond knives, and we would like to introduce this.

  • Contract Analysis
  • Electron microscope

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[Analysis Case] Evaluation of Si Anode in Lithium-ion Secondary Batteries

[Analysis Case] Evaluation of Si Anode in Lithium-ion Secondary Batteries

It is possible to evaluate the state of the electrodes before and after charging, as well as the presence and distribution of Li.

Silicon (Si) is one of the candidates for high-capacity anode active materials, but it is said to suffer from severe cycle degradation due to the very large volume changes during charge and discharge. We dismantled and observed the Si anode before and after charging under controlled atmospheric conditions. Furthermore, we created cross-sectional observation samples using the FIB micro-sampling method and conducted shape observation and EELS measurements with a Cs-corrected STEM device to evaluate the condition of the Si electrode and the distribution of Li within the electrode.

  • 充電曲線およびSi負極の携帯観察.png
  • Si負極の充電前後の表面形状観察.png
  • 充電後のSi負極のEELS測定結果.png
  • Contract Analysis
  • Contract measurement
  • Contract Inspection
  • Electron microscope

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[Analysis Case] Cross-sectional Observation and Elemental Analysis of Soft Materials

[Analysis Case] Cross-sectional Observation and Elemental Analysis of Soft Materials

Direct evaluation of the structure of solution samples through cryo-SEM observation and EDX analysis.

To observe and analyze the internal structure of organic materials and liquid samples that are sensitive to heat, it is necessary to suppress temperature increases caused by processing or electron beam irradiation and to conduct a series of analyses while maintaining the original structure of the sample. In this case study, we will introduce an example where a cosmetic was used as an evaluation sample, and structural analysis was performed from cross-section FIB processing to SEM observation and EDX analysis while maintaining a cooling environment.

  • Contract Analysis
  • Electron microscope

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